Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LP_(ij) modes

摘要

A comprehensive fully self-consistent optical-electrical-thermal-recombination model of the 650-nm oxide-confined GaAs-based GaInP/AlGaInP vertical-cavity surface-emitting diode lasers (VCSELs) is used to determine their anticipated room-temperature (RT) continuous-wave (CW) performance characteristics. As expected, for the devices with very large active regions, higher-order transverse LP_(ij) modes exhibit the lowest lasing thresholds. However, the desired single fundamental LP_(01) mode operation remains dominating one for relatively large active regions of diameters up to as much as 10 mm. Therefore, the 650-nm GaInP/AlGaInP QW VCSELs have been found to offer a very promising RT CW performance as sources of carrier radiation for the optical communication taking advantage of plastic (polymer) optical fibers (POFs).