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A 1 -V 4-GHz wide tuning range voltage-controlled ring oscillator in 0.18 μm CMOS

机译:采用0.18μmCMOS的1 V 4-GHz宽调谐范围压控环形振荡器

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A new differential delay cell with complementary current control to extend the control voltage range as well as the operation frequency is proposed for low voltage and wide tuning range voltage-controlled ring oscillator (VCRO). The complementary current control can get rid of the restriction that control voltage is unable to cover the full range of power supply voltage in a conventional VCRO. A three-stage VCRO chip working with 1 V power supply voltage is constructed using 0.18 μm 1P6M CMOS process for verifying the efficacy of the proposed differential delay cell. Measured results of the VCRO chip show that a wide range of operation frequency from 4.09 GHz to 479 MHz, a tuning range of 88%, is achieved for the full range of control voltage from 0 to 1 V. The power consumptions of the chip are 13 and 4 mW for oscillation outputs of 4.09 GHz and 479 MHz, respectively. The measured phase noise is -93.3dBc/Hz at 1 MHz offset from 4.09 GHz center frequency. The core area of the chip is 106 μm× 76.2 μm.
机译:针对低压和宽调谐范围的压控环形振荡器(VCRO),提出了一种具有互补电流控制的新型差分延迟单元,以扩展控制电压范围以及工作频率。互补电流控制可以摆脱传统VCRO中控制电压无法覆盖整个电源电压范围的限制。使用0.18μm1P6M CMOS工艺构造了一个工作电压为1 V的三级VCRO芯片,以验证所提出的差分延迟单元的功效。 VCRO芯片的测量结果表明,在0至1 V的整个控制电压范围内,可实现4.09 GHz至479 MHz的宽工作频率范围,88%的调谐范围。该芯片的功耗为对于4.09 GHz和479 MHz的振荡输出分别为13和4 mW。从4.09 GHz中心频率偏移1 MHz时,测得的相位噪声为-93.3dBc / Hz。芯片的核心面积为106μm×76.2μm。

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