Backside illumination processing technology for InGaAs/InAlAs/InP photofets and MSMs

摘要

Despite the theoretical and demonstrated advantages of numerpus discrete devices for electro-optical systems applications, integration remains a challenge. In particular, highly agile integration strategies, fully optimized device structures, and processing protocols have yet to be developed. Many of the unique processing and packaging constraints imposed by standard electro-optical circuit fabrication are overcome by the novel substrate removal process reported here. We demonstrate an InGaAs/ InAlAs/InP MSM and photofet process advance which lends itself generally to integration of dissimilar materials and device designs, and is applicable to many other component types. Passivation techniques for the frontside and backside are explored for optimized discrete components as well as integrated devices. Detector performance is seen to increase by 35 x for the MSM detectors, and we have obtained responsivity of more than 2.5 A/W for the photofets. The bonding and substrate removal process allows polylithic integration with various surrogate substrates.