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机译:演示了低压功率LDMOS的特定导通电阻与击穿电压折衷的改进
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Breakdown voltage (BV); Laterally double-diffused MOSFET (LDMOS); Shallow trench isolation (STI); Stepped oxide (SO); Specific on-resistance (R-sp);
机译:用于改善特定导通电阻与击穿电压折衷的改进,用于低压功率LDMOS
机译:基于深度神经网络的击穿电压和具有励磁板SOI LDMOS特定导通电阻的方法
机译:具有改进的击穿电压和特定ON-的介电沟槽LDMOS的可变-
机译:高击穿电压和低比导通电阻C掺杂蓝宝石衬底上的HFET,适用于低损耗和高功率开关应用
机译:具有高击穿电压和低导通电阻的新型沟槽横向功率MOSFET
机译:在SiNx钝化层中注入氟离子的高击穿电压和低动态导通电阻AlGaN / GaN HEMT
机译:具有自偏置累积层的超低特定导通电阻高压PLDMO的仿真研究
机译:高比功率飞机转弯机动:转弯时间与比能量变化的权衡