Impact of work-function variation on analog figures-of-merits for high-k/metal-gate junctionless FinFET and gate-all-around nanowire MOSFET

摘要

In this study, the impact of orientation of metal-gate granularity on analog figures-of-merit (FOMs) in high-k/ metal-gate junctionless (JL) fin-field-effect transistor (FinFET) and gate-all-around (GAA) nanowire metaloxide-semiconductor-field-effect-transistor (NWFET), with a similar ratio of average grain size to gate area is investigated. Further, their FOMs when operating in the linear and saturated regions have been compared using three-dimensional technology computer-aided design simulation. According to the standard deviation and relative deviation of the FOMs, it is observed that their FOMs are significantly affected by the work-function variation (WFV). In addition, as expected, the influence of WFV on the JL FinFET is greater than that on the GAA NWFET. Our study provides insights for circuit design using high-k/metal-gate technology.