Electrical properties of rare earth silicides produced by channeled ion beam synthesis

摘要

Electrical measurements have been performed on ErSi_1.7, YSi_1.7 and Er_0.5 Y_0.5 Si_1.7, produced by channeled ion beam synthesis. The results have been compared with thin films of the same rare earth silicides produced by other methods. The room temperature resistivities of the ErSi_1.7, YSi_1.7 and Er_0.5 Y_0.5 Si_1.7 are 52, 69 and 87 μΩ cm, respectively, significantly higher than the reported values for MBE synthesised layers. The ErSi_1.7 shows evidence of magnetic ordering, but this is not observed in either the YSi_1.7 or the Er_0.5 Y_0.5 Si_1.7 down to 3 K.