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Nanopatterning of colloidal nanocrystals emitters dispersed in a PMMA matrix by e-beam lithography

机译:通过电子束光刻对分散在PMMA基质中的胶体纳米晶体发射体进行纳米图案化

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摘要

We report on the fabrication of periodic nanostructures embedding semiconductor colloidal nanocrystals (NCs) by directly exposing a polymer/NCs blend to electron beam lithography (EBL). Our technological approach for the fabrication of NCs-based photonic devices relies on the dispersion of CdSe/ZnS core/shell NCs into a layer of polymethilmethacrylate (PMMA) positive electron resist, which is patterned by means of an EBL process. The presence of NCs in the resist did not modify the peculiar behaviour of PMMA, which was selectively removed from the regions exposed to the electron beam. The morphology of the sample was assessed by scanning electron microscopy and atomic force microscopy measurements. The optical analysis of the samples after the dispersion of the NCs into the PMMA matrix and the exposure to the e-beam showed the successful localization of the colloidal NCs, whose emission properties were preserved.
机译:我们通过直接将聚合物/ NCs混合物暴露于电子束光刻(EBL)来报告嵌入半导体胶体纳米晶体(NCs)的周期性纳米结构的制造。我们用于制造基于NCs的光子器件的技术方法依赖于CdSe / ZnS核/壳NCs分散到聚甲基丙烯酸甲酯(PMMA)正电子抗蚀剂层中,该层通过EBL工艺形成图案。抗蚀剂中NC的存在不会改变PMMA的特殊行为,PMMA的特殊行为是从暴露于电子束的区域中选择性去除的。通过扫描电子显微镜和原子力显微镜测量来评估样品的形态。将NC分散到PMMA基质中并暴露于电子束后,对样品进行光学分析表明,胶态NC的成功定位,其发射特性得以保留。

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