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The UV-nanoimprint lithography equipment with multi-head imprinting unit for sub-50 nm half-pitch patterns

机译:具有多头压印单元的UV-纳米压印光刻设备,可用于50nm以下的半间距图案

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摘要

Nanoimprinting lithography (NIL) is a promising technology to produce sub-50 nm half-pitch features on silicon- and/or quartz-based substrates. It is well-known as the next generation lithography. Especially, the UV-nanoimprint lithography technology has advantages of the simple process, low cost, high replication fidelity and relatively high throughput. In this paper, chip-size multi-head imprinting unit with compliance stage and overlay/alignment system with moire and dual grating unit are proposed in order to fabricate sub-50 nm half-pitch patterns. These systems are set-up and performed in single-step nanoimprinting tool (ANT-4) which has several functional units for nanoimprinting process. Using the UV-NIL tool, 50 nm, 70 nm and 100 nm half-pitch dot and line patterns are obtained. Also, 20 nm overlay/alignment accuracy is obtained by means of the proposed method.
机译:纳米压印光刻(NIL)是一种有前途的技术,可以在基于硅和/或石英的基板上产生低于50 nm的半节距特征。它被称为下一代光刻。特别地,UV-纳米压印光刻技术具有工艺简单,成本低,复制保真度高和生产量相对较高的优点。本文提出了具有顺应性平台的芯片尺寸多头压印单元,以及具有波纹和双光栅单元的覆盖/对准系统,以制造低于50 nm的半间距图案。这些系统是在单步纳米压印工具(ANT-4)中设置和执行的,该工具具有用于纳米压印过程的多个功能单元。使用UV-NIL工具可获得50 nm,70 nm和100 nm半间距点和线图案。而且,借助于所提出的方法获得了20nm的覆盖/对准精度。

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