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Filling behavior of UV nanoimprint resin observed by using a midair structure mold

机译:使用中空结构模具观察UV纳米压印树脂的填充行为

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摘要

The filling behavior of resin during UV nanoimprint lithography (UV-NIL) was observed by using a "midair structure mold" and by changing the imprint pressure. The midair structure molds were fabricated by electron beam lithography (EBL) using hydrogen silsesquioxane (HSQ) as a negative tone resist. After the fabrication of midair structure mold, two types of surface treatment molds, which were with or without release coating, were prepared. Using these molds, the filling behavior of a UV curable resin was investigated at various pressures. The results indicate that a pressure of approximately 1.2 MPa is necessary for complete filling in the case of molds treated with a release agent. This method demonstrates effect of a release coating for UV-NIL.
机译:通过使用“中空结构模具”并通过改变压印压力,观察了在紫外线纳米压印光刻术(UV-NIL)期间树脂的填充行为。使用氢倍半硅氧烷(HSQ)作为负性抗蚀剂,通过电子束光刻(EBL)制造半空中结构模具。在制造中空结构模具之后,制备两种类型的具有或不具有脱模涂层的表面处理模具。使用这些模具,在各种压力下研究了紫外线固化树脂的填充行为。结果表明,在用脱模剂处理的模具中,要完全填充,大约需要1.2 MPa的压力。该方法证明了用于UV-NIL的隔离涂层的效果。

著录项

  • 来源
    《Microelectronic Engineering》 |2009年第6期|676-680|共5页
  • 作者单位

    Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan;

    Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan;

    Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan;

    Toyo Gosei Co. Ltd., Photosensitive Materials Research Center, 4-2-1 Wakahagi, Inba-mura, Inba-gun, Chiba 270-1609, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanoimprint lithography (NIL); UV photocurable resin; hydrogen silsesquioxane (HSQ); contact angle; surface energy;

    机译:纳米压印光刻(NIL);紫外线光固化树脂;氢倍半硅氧烷(HSQ);接触角表面能;

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