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Preparation And Characterization Of Si-doped Barium Titanate Nanopowders And Ceramics

机译:硅掺杂钛酸钡纳米粉体和陶瓷的制备与表征

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摘要

Si-doped barium titanate nanopowders and ceramics were prepared through the sol-gel process. The powders and ceramics were characterized by methods of XRD, SEM and TEM. The dielectric properties of the ceramics were also determined. The results indicated that the powders were nanopowders and they were all cubic BaTiO_3 phase with the concentration of Si ≤ 5.0 mol%. When the concentration of Si increased to 10.0 mol%, another phase of Ba_2TiSi_2O_8 appeared. After sintering, the cubic BaTiO_3 phase was transformed into tetrahedron BaTiO_3 phase. Si doping with low concentration resulted in improving grain growth and reduced dielectric loss. As the sintering temperature increased, the dielectric properties of the ceramics decreased. BaTiO_3 ceramics doped with Si all had a small peak at room temperature in ε-T cures. Specially, the ceramic doped with 0.3 mol% Si had evident double peaks, the maximum room temperature permittivity (4081) and the minimum dielectric loss (0.004).
机译:通过溶胶-凝胶法制备了硅掺杂的钛酸钡纳米粉体和陶瓷。通过XRD,SEM和TEM对粉末和陶瓷进行了表征。还确定了陶瓷的介电性能。结果表明,该粉末为纳米粉,均为立方晶BaTiO_3相,Si含量≤5.0mol%。当Si的浓度增加到10.0mol%时,出现Ba_2TiSi_2O_8的另一相。烧结后,立方BaTiO_3相转变为四面体BaTiO_3相。低浓度的硅掺杂导致晶粒生长的改善和介电损耗的降低。随着烧结温度的升高,陶瓷的介电性能降低。掺Si的BaTiO_3陶瓷在ε-T固化中在室温下都有一个小峰。特别地,掺杂有0.3 mol%Si的陶瓷具有明显的双峰,最大室温介电常数(4081)和最小介电损耗(0.004)。

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