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Dynamic deformation of a wafer above a lift hole and influence on flatness due to chucking

机译:晶片在提升孔上方的动态变形以及由于卡盘而对平面度的影响

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摘要

A site flatness of less than 26 nm will be required when fabricating next-generation devices. A pin chuck is used to flatten warped wafers. This chuck has lift holes for loading and unloading wafers and a ring seal around its periphery. The lift holes and seal deteriorate the local flatness. This paper describes the influence of local dynamic deformation on wafer flatness, which is caused by flattening of the warped wafer, and the deterioration in the wafer flatness due to lift holes and due to a polishing step. The repeatability of a stitching method was examined to accurately measure the flatness over a wide region; its value was less than ±3 nm. This method was used to measure the local dynamic deformation. The fluctuation in the raised deformation above the lift hole when the wafer was stationary was ±4 nm. On the other hand, when the wafer moved it was plus/minus several tens of nanometers and the local dynamic deformation greatly affects the flatness. In addition, it was demonstrated that the polishing step and the deformation difference between the seal and the pin greatly deteriorate the flatness; a 10-mm-diameter ring seal and a 2-mm-pitch pin array cause a wafer deformation of approximately 0.23 μm.
机译:在制造下一代器件时,要求平面度小于26 nm。夹盘用于将翘曲的晶片弄平。该卡盘具有用于装载和卸载晶片的提升孔,以及围绕其周边的环形密封件。提升孔和密封会降低局部平面度。本文描述了局部动态变形对晶片平坦度的影响,这是由于翘曲晶片变平而引起的,以及由于提升孔和抛光步骤导致晶片平坦度的下降。检查了缝合方法的可重复性,以在宽范围内准确测量平整度;其值小于±3nm。该方法用于测量局部动态变形。当晶片静止时,提升孔上方凸起变形的波动为±4 nm。另一方面,当晶片移动时,其正负几十纳米,局部动态变形极大地影响了平坦度。此外,已经证明,抛光步骤和密封件与销之间的变形差大大降低了平面度。直径为10毫米的环形密封件和间距为2毫米的销阵列会导致大约0.23μm的晶片变形。

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