Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications

摘要

The operation at frequencies above 100 GHz of electronic devices like transistors has been achieved botli by using high electron mobility III—V semiconductor materials or heterostructures and by implementing fabrication techniques which strongly reduce parasitic capacitances between the device terminals without increasing series resistances. The technology has been applied on different GaN high electror mobility transistor epiwafers, and the devices performances analyzed under their DC and RF characteristics, outlining that further semiconductor material optimization is mandatory to fully benefit the suh V_4 micron Gate length for very high frequency operation advantage.