Band offsets at the (1 0 0)GaSb/Al_2O_3 interface from internal electron photoemission study

摘要

From electron internal photoemission and photoconductivity measurements at the (1 0 0)GaSb/Al_2O_3 interface, the top of the GaSb valence band is found to be 3.05 ± 0.10 eV below the bottom of the Al_O_3 conduction band. This interface band alignment corresponds to conduction and valence band offsets of 2.3 ± 0.10 eV and 3.05 ± 0.15 eV, respectively, indicating that the valence band in GaSb lies energetically well above the valence band of In_xGa_(1-x)As (0 ≤ x ≤ 0.53) or InP.