Observation of multi-conductance state in solution processed Al/a-TiO_2/ITO memory device

摘要

In the present study, fabrication of memory devices using sol-gel derived amorphous titanium oxide (a-TiO_2) thin films and its characterization are presented. Titanium oxide thin films of thickness 50 nm were deposited on ITO substrates using a spin coating method. The films annealed at 200 ℃ for an hour in air atmosphere have shown good transparency in visible region. Bipolar resistive switching behaviors of Al/ a-TiO_2/ITO stacked structures were investigated using current-voltage characteristics. The observed current-voltage characteristics have described the bipolar resistive switching property of a-TiO_2 films. Multi-step conductance behavior has been observed in this Al/a-TiO_2/ITO stacked structures and its mechanism has been analyzed.