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机译:28 nm技术节点的高k金属栅极铝CMP工艺开发
United Microelectronics Corp., Advanced Technology Development Division, No. 18 Nanke 2nd Rd., Tainan Science Park, Taiwan;
United Microelectronics Corp., Advanced Technology Development Division, No. 18 Nanke 2nd Rd., Tainan Science Park, Taiwan;
United Microelectronics Corp., Advanced Technology Development Division, No. 18 Nanke 2nd Rd., Tainan Science Park, Taiwan;
United Microelectronics Corp., Advanced Technology Development Division, No. 18 Nanke 2nd Rd., Tainan Science Park, Taiwan;
United Microelectronics Corp., Advanced Technology Development Division, No. 18 Nanke 2nd Rd., Tainan Science Park, Taiwan;
United Microelectronics Corp., Advanced Technology Development Division, No. 18 Nanke 2nd Rd., Tainan Science Park, Taiwan;
United Microelectronics Corp., Advanced Technology Development Division, No. 18 Nanke 2nd Rd., Tainan Science Park, Taiwan;
United Microelectronics Corp., Advanced Technology Development Division, No. 18 Nanke 2nd Rd., Tainan Science Park, Taiwan;
RMG; HKMG; Al-CMP; metal gate height loss; RTPC; defect improve;
机译:使用28nm技术节点制造的高k金属栅极场效应晶体管的电容瞬态光谱测量
机译:针对28 nm技术节点上的中间3D TSV应用的CMP工艺开发
机译:掺氟高k /金属栅p-MOSFET 28-nm工艺过程的低频噪声研究
机译:28nm技术节点的高k金属栅极铝合金CMP的过程开发
机译:基于future的多金属高k栅极电介质的电气和材料特性,可用于未来的规模化CMOS技术:物理,可靠性和工艺开发。
机译:栅堆叠结构和工艺缺陷对32 nm工艺节点PMOSFET中NBTI可靠性的高k介电依赖性的影响
机译:用于子22nm节点的高级CMOS技术(高K /金属栅极堆叠)