Low-power and high-linearity SiGe HBT low-noise amplifier using IM3 cancellation technique

摘要

In order to achieve high linearity and low noise figure (NF) simultaneously, a modified cascode structure with a series-shunt feedback capacitance achieving third-order intermodulation (IM3) cancellation is proposed. The proposed LNA is designed and simulated for 5.7 GHz wireless local area network (WLAN) band applications with a 0.35 μm silicon germanium (SiGe) bipolar-CMOS (BiCMOS) process. The LNA has the power gain of 16.25 dB, NF of 2.79 dB, IIP_3 of 3.69 dBm with 4 mW DC power consumption from a supply voltage of 3 V. To our knowledge, by comparison with recently reported LNAs, the presented LNA achieves the highest figure of merit (FOM) by taking into account the power gain, IIP_3, NF, power consumption, and operation frequency.