机译:使用凹槽沟道阵列晶体管结构的动态随机存取存储器的混合浅沟槽隔离引起的机械应力的测量
Department of Electrical Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang, Kyungpook 790-784, Republic of Korea;
Department of Electrical Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang, Kyungpook 790-784, Republic of Korea;
Department of Electrical Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang, Kyungpook 790-784, Republic of Korea;
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do 467-701, Republic of Korea;
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do 467-701, Republic of Korea;
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do 467-701, Republic of Korea;
Department of Electrical Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang, Kyungpook 790-784, Republic of Korea;
mechanical stress; shallow trench isolation (STI); dynamic random access memory (DRAM); refresh time; recess channel array transistor (RCAT);
机译:具有SiO_2 / Si_3N4 / SiO_2栅介质的沟道嵌入式一个晶体管动态随机存取存储器
机译:用于50 nm以下动态随机存取存储单元的鳍式和嵌入式沟道金属氧化物半导体场效应晶体管
机译:嵌入式通道FIN场效应晶体管电池技术用于将来发电动态随机接入存储器
机译:具有VRAT(垂直凹槽阵列晶体管)和管道的超高密度闪存的新型3-D结构和管道(同一平面上的平坦集成)
机译:高密度动态随机存取存储器阵列中由α粒子引起的软错误的分析。
机译:一种新颖的单晶体管动态随机存取存储器(1T DRAM)具有部分插入的宽带隙双壁垒适用于高温应用
机译:一个双极晶体管选择器 - 一个用于交叉存储器阵列的电阻随机存取存储器件