Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric

摘要

The forming free and reliable switching behavior is observed in the resistive memory devices with HfOx/TiOx/HfO in 298-373 K temperature range. The charge transport in LRS is governed by Ohmic conduction of electrons while HRS governed by F-P emission. The defect assisted filamentary conduction is possibly due to the formation of a high density of localized oxygen vacancies created by thin TiOx layer in the stack. No significant dispersion in set and reset voltage is observed at higher temperature. The memory device exhibits stable retention characteristics at higher temperature with less degradation of resistance ratio. (C) 2015 Elsevier B.V. All rights reserved.