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A Monolithic High-Flow Knudsen Pump Using Vertical Al2O3 Channels in SOI

机译:SOI中使用垂直Al 2 O 3 通道的整体式高流量Knudsen泵

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This paper describes the analysis, design, and microfabrication of a Knudsen pump for high flow generation. The Knudsen pump generates gas streams from the cold end to the hot end using free-molecular flow without moving parts. The designed Knudsen pump has densely arrayed vertically oriented 2- wide rectangular channels for providing high flow. The temperature gradient is provided between a thin-film metal heater and a gridded Si heat sink in the Knudsen pump structure. The Knudsen pump is fabricated on a single silicon-on-insulator wafer using a four-mask lithographic process. The sidewalls of the rectangular channels are constructed by atomic layer deposition of AlO on sacrificial Si channels and subsequent Si etching. The fabricated Knudsen pumps have designed footprints ranging from 0.4–3.2 cm. At atmospheric pressure, the fabricated Knudsen pumps provide a maximum measured air flow rate of >200 sccm with response time of <0.5 s. Experimental results have also shown that these Knudsen pumps are most suitable for pumping at moderate vacuum pressure of Torr (27 kPa). [2014-0367]
机译:本文介绍了用于高流量产生的Knudsen泵的分析,设计和微制造。 Knudsen泵使用自由分子流从冷端到热端生成气流,而没有移动部件。设计的Knudsen泵具有密集排列的垂直定向2宽矩形通道,可提供高流量。在Knudsen泵结构中的薄膜金属加热器和网格Si散热器之间提供温度梯度。 Knudsen泵使用四掩模光刻工艺在单个绝缘体上硅晶片上制造。矩形通道的侧壁是通过在牺牲Si通道上进行AlO原子层沉积并随后进行Si蚀刻来构造的。装配好的Knudsen泵的设计占地面积为0.4-3.2厘米。在大气压下,装配好的Knudsen泵提供的最大测得空气流量> 200 sccm,响应时间<0.5 s。实验结果还表明,这些Knudsen泵最适合在Torr(27 kPa)的中等真空压力下泵送。 [2014-0367]

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