机译：在GaAs衬底上整体生长2μm锑基光泵浦垂直外腔表面发射激光器的连续波，室温操作
California NanoSystems Institute and Electrical Engineering Department, University of California, Los Angeles,420 Westwood Plaza, Los Angeles, CA 90095, U.S.A. Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, U.S.A.;
California NanoSystems Institute and Electrical Engineering Department, University of California, Los Angeles,420 Westwood Plaza, Los Angeles, CA 90095, U.S.A.;
California NanoSystems Institute and Electrical Engineering Department, University of California, Los Angeles,420 Westwood Plaza, Los Angeles, CA 90095, U.S.A.;
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, U.S.A.;
Fraunhofer-lnstitut fuer Angewandte Festkoerperphysik, Tullastrasse 72, D-79108 Freiburg, Germany;
Fraunhofer-lnstitut fuer Angewandte Festkoerperphysik, Tullastrasse 72, D-79108 Freiburg, Germany;
College of Optical Sciences, University of Arizona, Tucson, AZ 85721, U.S.A.;
College of Optical Sciences, University of Arizona, Tucson, AZ 85721, U.S.A.;
Physics Department, University of Marburg, Renghof 5, 35032 Marburg, Germany;
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, U.S.A.;
California NanoSystems Institute and Electrical Engineering Department, University of California, Los Angeles,420 Westwood Plaza, Los Angeles, CA 90095, U.S.A.;
机译：单片生长的1.5μm光泵浦垂直外腔面发射激光器的连续波操作
机译：单片生长的1.5μm光泵浦垂直外腔面发射激光器的连续波操作
机译：在Si（100）衬底上单片生长的室温光泵浦InGaSb量子阱激光器
机译：室温CW工作在1.55 / spl mu / m的单片InP基光泵浦垂直外腔表面通过MOCVD生长的激光器
机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
机译：不同腔配置中锁模垂直外腔面发射激光器的时滞-微分方程建模
机译：电信波长范围内的室温连续波操作 基于Gasb的激光器在si上单片生长
