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首页> 外文期刊>Journal of Microelectromechanical Systems >Design, Fabrication, and Characterization of Scandium Aluminum Nitride-Based Piezoelectric Micromachined Ultrasonic Transducers
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Design, Fabrication, and Characterization of Scandium Aluminum Nitride-Based Piezoelectric Micromachined Ultrasonic Transducers

机译:基于氮化铝Aluminum的压电微机械超声换能器的设计,制造和表征

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This paper presents the design, fabrication, and characterization of piezoelectric micromachined ultrasound transducers (PMUTs) based on scandium aluminum nitride (ScAlN) thin films (x = 15%). ScAlN thin film was prepared with a dual magnetron system and patterned by a reactive ion etching system utilizing chlorine-based chemistry with an etching rate of 160 nm/min. The film was characterized by X-ray diffraction, which indicated a crystalline structure expansion compared with pure AlN and a well-aligned ScAlN film. ScAlN PMUTs were fabricated by a two-mask process based on cavity SOI wafers. ScAlN PMUTs with 50- and 40- diameter had a large dynamic displacement sensitivity measured in air of 25 nm/V at 17 MHz and 10 nm/V at 25 MHz, twice that of AlN PMUTs with the same dimensions. The peak displacement as a function of electrode coverage was characterized, with maximum displacement achieved with an electrode radius equal to 70% of the PMUT radius. Electrical impedance measurements indicated that the ScAlN PMUTs had 36% greater electromechanical coupling coefficient ( compared with AlN PMUTs. The output pressure of a ScAlN PMUT array was 0.7 kPa/V at ~1.7 mm away from the array, which is approximately three times greater that of an AlN PMUT array with the same element geometry and fill factor measured at the same distance. Acoustic spreading loss and PMUT insertion loss from mechanical transmit to receive were characterized with a 15 15 ScAlN PMUT array via hydrophone and laser Doppler vibrometer. [17509-2017]
机译:本文介绍了基于氮化scan铝(ScAlN)薄膜(x = 15%)的压电微机械超声换能器(PMUT)的设计,制造和表征。用双磁控管系统制备ScAlN薄膜,并通过使用氯基化学物质的反应离子刻蚀系统以160 nm / min的刻蚀速率对其进行构图。该膜通过X射线衍射表征,与纯AlN和取向良好的ScAlN膜相比,表明晶体结构膨胀。 ScAlN PMUT是通过基于腔体SOI晶片的两次掩模工艺制造的。直径为50和40的ScAlN PMUT在25 MHz / V的空气中(在17 MHz时)和10 nm / V(在25 MHz的空气中)中测得的动态位移灵敏度较大,是相同尺寸的AlN PMUT的两倍。表征了峰值位移与电极覆盖率的关系,其中最大位移在电极半径等于PMUT半径的70%的情况下实现。电阻抗测量表明,ScAlN PMUT具有比AlN PMUT高36%的机电耦合系数。在距阵列约1.7 mm处,ScAlN PMUT阵列的输出压力为0.7 kPa / V,约为其的三倍。 [15509-]在相同距离下测量具有相同元件几何形状和填充因子的AlN PMUT阵列的结果,用15 15 ScAlN PMUT阵列通过水听器和激光多普勒振动计表征了从机械发射到接收的声扩散损耗和PMUT插入损耗。 2017]

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