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Interfacial Dislocation Networks and Creep in Directional Coarsened Ru-Containing Nickel-Base Single-Crystal Superalloys

机译:定向粗化含钌镍基单晶高温合金的界面错位网络和蠕变

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摘要

Mechanisms of creep deformation in nickel-base superalloy single crystals in the directional coarsening regime have been studied in alloys with large variations in γ-γ′ lattice misfit and phase composition, achieved by Ru additions and variable levels of Cr and Co. Interfacial dislocation spacings established by long-term annealing experiments under no externally applied stress indicate that the experimental alloys have high-temperature lattice misfits ranging from near-zero to as large as ?0.65 pct. Variation in misfit influences the stress-induced directional coarsening (rafting) behavior during creep deformation at 950 °C and 290 MPa. In postcreep deformed material, the density of excess dislocations (defined as the dislocations beyond those necessary to relieve the lattice misfit) at the γ-γ′ interfaces varied with alloy composition, with the most creep-resistant alloy containing the highest excess interfacial dislocation density. In the directional coarsening creep regime, continued deformation requires shearing of the γ′ rafts and is strongly influenced by the resistance of the precipitates to shearing as well as the interfacial dislocation structure. A preliminary model for creep in the rafting regime is developed.
机译:研究了镍基高温合金单晶在定向粗化过程中蠕变变形的机理,研究了通过添加Ru和可变含量的Cr和Co实现的γ-γ'晶格失配和相组成变化较大的合金。界面位错间距通过在没有外部施加应力的情况下进行的长期退火实验确定的结果表明,实验合金的高温晶格失配范围从接近零到高达0.65 pct。失配的变化会影响在950°C和290 MPa时蠕变变形过程中应力引起的定向粗化(漂流)行为。在蠕变后变形的材料中,γ-γ'界面处的过量位错(定义为超出晶格失配所必需的位错以外的位错)的密度随合金成分而变化,其中最耐蠕变的合金具有最高的过量界面位错密度。在定向粗化蠕变状态下,连续变形需要对γ'筏进行剪切,并且受到析出物对剪切的抵抗力以及界面位错结构的强烈影响。建立了漂流过程中蠕变的初步模型。

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  • 来源
    《Metallurgical and Materials Transactions A》 |2008年第6期|1290-1307|共18页
  • 作者单位

    General Electric Aviation Cincinnati OH 45215 USA;

    State Key Laboratory for Advanced Metals and Materials University of Science and Technology Beijing Beijing 100083 P.R. China;

    Department of Materials Science and Engineering University of Michigan Ann Arbor MI 48109 USA;

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