Effective numerical integration of traveling wave model for edgeâemitting broadâarea semiconductor lasers and amplifiers

R. Äiegisa amp; M. Radziunasb

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Effective numerical integration of traveling wave model for edgeâemitting broadâarea semiconductor lasers and amplifiers

机译：边缘发射广域半导体激光器和放大器行波模型的有效数值积分

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《Mathematical Modelling and Analysis》 |2010年第4期|p.409-430|共22页
作者
R. Äiegisa amp; M. Radziunasb;
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a Vilnius Gediminas Technical University, Sauletekio al. 11, Vilnius, LTâ10223, Lithuania E-mail: b Weierstrass Institute for Applied Analysis and Stochastics, Mohrenstarsse 39, Berlin, 10117, Germany E-mail:;

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3. Edge-emitting semiconductor laser subject to nonsinusoidal excitation from three-dimensional autonomous system: numerical and electronic models analysis [J] . Momo Foutse, Paul Woafo Optical and quantum electronics . 2015,第10期

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4. Modeling and Simulations of Edge-Emitting Broad-Area Semiconductor Lasers and Amplifiers [C] . Mindaugas Radziunas International conference on parallel processing and applied mathematics . 2016

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5. Native oxidation of aluminum-bearing III-V semiconductors with applications to edge- and surface-emitting lasers and to the stabilization of light emitting diodes. [D] . Richard, Timothy Allen. 1995

机译：含铝III-V半导体的自然氧化，可应用于边缘发射和表面发射激光器以及发光二极管的稳定化。
6. Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications [O] . A. Bilenca, S. H. Yun, G. J. Tearney, -1

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7. EFFECTIVE NUMERICAL INTEGRATION OF TRAVELING WAVE MODEL FOR EDGE‐EMITTING BROAD‐AREA SEMICONDUCTOR LASERS AND AMPLIFIERS [O] . Raimondas Čiegis, Mindaugas Radziunas 2010

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Effective numerical integration of traveling wave model for edgeâemitting broadâarea semiconductor lasers and amplifiers

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Effective numerical integration of traveling wave model for edgeâemitting broadâarea semiconductor lasers and amplifiers