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机译:圆柱形旋转电极等离子化学汽化加工减薄2英寸SiC晶片
Department of Precision Science and Technology, Graduate School of Engineering,Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering,Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering,Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Research Center for Ultra-Precision Science and Technology,Graduate School of Engineering, Osaka University,2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering,Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering,Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering,Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan,Research Center for Ultra-Precision Science and Technology,Graduate School of Engineering, Osaka University,2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
thinning; atmospheric-pressure plasma; plasma etching; plasma chemical vaporization machining; pcvm;
机译:使用狭缝电极通过等离子化学汽化加工来减薄两英寸的碳化硅晶片
机译:衬底加热对等离子体化学汽化加工石英晶体晶片厚度校正的影响
机译:通过等离子化学汽化加工无损提高石英晶片的厚度均匀性
机译:圆柱形旋转电极等离子化学汽化加工减薄2英寸SiC晶片
机译:用于原子发射光谱的全真空薄膜等离子体的磁场拖尾
机译:低表面粗糙度反应烧结碳化硅等离子化学汽化加工气体成分的优化
机译:通过露天式等离子体化学汽化加工改善切割石英晶晶片处的厚度分布