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机译:3英寸4H-SiC基板的无磨料平坦化,采用催化剂作参考蚀刻
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering,Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;
Ebara Corporation, 4-2-1 Hon-fujisawa, Fujisawa, Kanagawa 251-8502, Japan;
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan,Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering,Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;
4h-sic; planarization; polishing; etching; catalyst;
机译:使用催化剂参考蚀刻对6英寸4H-SiC晶片进行平面化
机译:4H-SiC平面化,使用纯水将催化剂称为蚀刻剂
机译:催化剂刻蚀平坦化的4H-SiC(0001)表面终止物种的研究
机译:3英寸4H-SiC基板的无磨料平面化,采用催化剂参考蚀刻
机译:同步X射线形貌表征4H-SiC衬底的缺陷
机译:4H-SiC衬底上4H-SiC圆形膜的杨氏模量和残余应力的研究
机译:无磨铜化学机械平面化工艺的建模与表征
机译:IBaD底物的底物平面化研究