Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-ray Three-Dimensional Topography

摘要

This paper demonstrates the X-ray three-dimensional topography of basal-plane dislocations (BPDs) and threading edge dislocations (TEDs) in 4H-SiC. Cross-sectional imaging shows the propagation of BPDs from a substrate to an epilayer and the conversion of BPDs into TEDs near the epilayer/substrate interface. The strain analysis of TEDs exhibits the image of strains on the order of ±10~(-5) . The observed strain images correlate well to simulation results.