Charge Trapping in SiC Power MOSFETs and its Consequences for Robust Reliability Testing

摘要

Threshold voltage (V_T) instability remains an important issue for the performance, reliability, and qualification of SiC power MOSFET devices. The direct application of existing reliability test standards to SiC power MOSFETs can in some cases result in an inconsistent pass/fail response for a given device. To ensure SiC MOSFET device reliability, some modifications to existing test methods may be necessary.