Non destructive inspection of dislocations in SiC wafer by mirror projection electron microscopy

摘要

A mirror electron microscopy (MPJ) was developed for defect inspection in silicon carbide (SiC) wafer as non destructive, high spatial resolution and high throughput method. Each of three type dislocations, threading screw dislocation (TSD), threading edge dislocation (TED) and basal plane dislocations (BPD) in 4H-SiC wafer were identified in MPJ image as a dark dot with different type of tailing. This new method provides high performance inspection of defects in SiC possible without specimen pre-treatment.