GaN Thin-Film-Depositions on Glass and Amorphous-SiO_2-Layer-Deposited Si Single-Crystalline Substrates

摘要

Gallium nitride (GaN) transparent and semiconducting thin films were prepared on an amorphous glass substrate by a reactive sputtering method using Ar-N_2 radio-frequency plasmas. In addition, GaN thin films were prepared on amorphous silicon-dioxide (SiO_2) layer-deposited Si (111) single-crystalline substrates by a reactive evaporation method. Optical transmission properties, electrical properties, and crystallinities of the films prepared on the glass substrate were investigated as a function of the mixing ratio of the reactive sputtering gases. On the other hand, variations in the crystallinities of the films prepared on the amorphous SiO_2 layer-deposited Si (111) substrates were investigated as a function of the thickness of the amorphous SiO_2 layers.