Synthesis of Diamond on SiC by Microwave Plasma Chemical Vapor Deposition: Comparison of Silicon-Face and Carbon-Face

摘要

Diamond is arguably the best candidate material for heat dissipation applications, especially in high-power electronic devices. Silicon carbide (SiC) is a kind of wide bandgap material, which can be used in applications of silicon (Si) components to reach the performance limits. In this paper, thin diamond films were successfully deposited on C-face and Si-face of 6H-SiC substrates respectively using MPCVD at temperatures from 800 to 1050 °C. SEM images indicated the growth quality comparison of the two faces of SiC. The diffraction peaks of the diamond (111), (220), and (311) crystal planes can be observed by XRD measurement, and the intensity of the diamond diffraction peaks grown on the C-face is stronger than that on Si-face. The growth process was analyzed by Raman spectrum. FWHM of diamond Raman spectra on Si-face and C-face are 6.07cm~(-1) and 5.47cm~(-1) respectively. All the above measurement results show that the diamond grown on the C-face has higher crystal quality than that on the Si-face of SiC.