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Electric field and tip-surface interaction dependence in nanopattern deposition by electropulsed scanning probe microscopy

机译:电脉冲扫描探针显微镜在纳米图案沉积中电场和尖端表面相互作用的依赖性

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摘要

The reduced dimensions of novel integrated devices and systems stresses the need for new nanopatterning techniques. We showed that metallic individual pixels, pixilated patterns and smooth patterns can be obtained by applying negative voltage pulses to a tip coated with a CoCr metallic film while scanning in tapping mode AFM. Electropulsed AFM deposition at different negative pulse voltages and frequencies, and different tip-surface interaction conditions is reported in this work. Deposits with pixel diameter between 21 and 34 nm and height between and 2-3 nm were obtained by applying -12 V pulses to the tip. When the pulse voltage goes to -16.8 V the pixel diameter increases to 90 nm and height exceeds 4.0 nm. At 10 Hz pulse frequencies the patterns obtained are pixilated, resulting in high surface roughness (Ra=0.44 nm). At 20 Hz the deposited pixels are fully merged, resulting in flat surfaces with low roughness (Ra=0.19 nm). For higher pulse frequencies up to 60 Hz the roughness remains between Ra=0.17 and Ra =0.22 nm. The deposited thickness increases from values around 1.0 nm at -7 V pulse voltage to values around 4 nm at -16.5 V. By properly tuning the amplitude setpoint for a new tip a similar deposited thickness dependence can be obtained. The deposited thickness increases with the tip-surface interaction.
机译:新颖的集成装置和系统的减小的尺寸强调了对新的纳米图案技术的需求。我们表明,在以攻丝模式AFM扫描时,通过向涂有CoCr金属膜的尖端施加负电压脉冲,可以获得金属单个像素,像素化图案和平滑图案。在这项工作中报道了在不同的负脉冲电压和频率下以及不同的尖端表面相互作用条件下的电脉冲原子力显微镜沉积。通过向尖端施加-12 V脉冲,可以获得像素直径在21至34 nm之间,高度在2-3 nm之间的沉积物。当脉冲电压达到-16.8 V时,像素直径增加到90 nm,高度超过4.0 nm。在10 Hz脉冲频率下,获得的图形像素化,导致高表面粗糙度(Ra = 0.44 nm)。在20 Hz时,沉积的像素会完全合并,从而形成具有低粗糙度(Ra = 0.19 nm)的平坦表面。对于高达60 Hz的较高脉冲频率,粗糙度保持在Ra = 0.17和Ra = 0.22 nm之间。沉积的厚度从-7 V脉冲电压下的1.0 nm左右的值增加到-16.5 V的4 nm左右的值。通过适当调整新针尖的幅度设定值,可以获得相似的沉积厚度依赖性。沉积厚度随尖端表面相互作用而增加。

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