Photoluminescence study of the nitrogen content effect on GaAs/GaAs_(1-x)GaAs/AlGaAs: (Si) quantum well

摘要

We study the effect of nitrogen content in modulation-doped GaAs/GaAs_(1-x)tN_x/GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs_(1-x)N_x/GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model.