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Effect of magnetic fields on the abnormal electroresistance behavior in epitaxial thin films

机译:磁场对外延薄膜电阻异常行为的影响

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摘要

We report an unusual electroresistance (ER) behavior induced by a current and its response to magnetic fields in La_(0.8)Ca_(0.2)MnO_3 epitaxial thin films. These thin films were fabricated on SrTiO_3 (100) substrate using pulsed laser deposition (PLD) technique. It is found that the electric resistivity in these films is significantly enhanced by applying a dc current over a threshold value. Simultaneously, an abnormal electroresistance behavior appears in the temperature range from 10 to 300 K. The enhanced resistance turns out to be very sensitive to a weak current. Even a very small dc current can remarkably depress the high resistance, showing an unusual colossal ER effect. The ER reaches ~1175% at temperatures lower than ~50K, and ?705% at 300 K for a current changing from 0.72 to 10.5 μA. The influence of magnetic fields on the transport was also studied. The Ⅰ—Ⅴ curves can be strongly influenced by a low magnetic field even at room temperature. The deduced magnetoresis-tance (MR) reaches 120% at 300 K upon applying a magnetic field of 0.25 T. An interesting phenomenon is that the observed MR is current dependent.
机译:我们报告了由电流及其在La_(0.8)Ca_(0.2)MnO_3外延薄膜中的磁场响应引起的异常电阻(ER)行为。这些薄膜是使用脉冲激光沉积(PLD)技术在SrTiO_3(100)基板上制造的。发现通过施加超过阈值的dc电流,这些膜中的电阻率显着提高。同时,在10至300 K的温度范围内出现异常的电阻行为。事实证明,增强的电阻对微弱的电流非常敏感。即使很小的直流电流也可以显着抑制高电阻,从而显示出异常的巨大ER效应。当电流从0.72变为10.5μA时,ER在低于〜50K的温度下达到〜1175%,在300 K的温度下达到705705%。还研究了磁场对传输的影响。即使在室温下,低磁场也会强烈影响Ⅰ-Ⅴ曲线。施加0.25 T的磁场后,在300 K时推定的磁阻(MR)达到120%。一个有趣的现象是观察到的MR与电流有关。

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