Effects of substrate temperature on structural, electrical and optical properties of As-doped ZnO films

摘要

As-doped ZnO films were prepared by co-sputtering ZnO and Zn_3As_2 targets on glass substrates at various temperatures from 250 to 500 ℃. The effects of substrate temperature on structural, electrical and optical properties of the films were investigated. The films grown at temperatures from 250 to 400 ℃ were c-axis oriented and those deposited above 400 ℃ exhibited poor crystallinity. Hall measurement showed that p-type ZnO: As films were prepared at different temperatures. With increasing the substrate temperature from 250 to 500 ℃, the optical band gap (E_g) first decreased, and then increased. The E_g changes upon the substrate temperature were due to the effect of substrate temperature on the crystallinity of ZnO films.