机译:高温退火的重掺杂磷的硅片中的氧沉淀
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
heavily doped czochralski silicon; phosphorus; oxygen precipitation;
机译:氮共掺杂对重掺杂磷的直拉硅高温退火过程中氧沉淀的增强作用
机译:高温氮退火在重掺杂砷的硅晶片上的硅外延层中引起间隙氧沉淀
机译:通过高温退火增强切克劳斯基硅片中氧气的沉淀
机译:重磷掺杂的直拉硅中的氧析出
机译:高温退火过程中硅片中镍和金的热力学研究。
机译:仅在高温下仅使用氧气进行硅蚀刻:在150 mm硅晶片上进行硅微加工的另一种方法
机译:初始空位浓度和退火温度对硅晶片氧簇的影响的相场模拟
机译:450℃热退火对B掺杂CZ si晶片中氧沉淀的影响