Improved p-n heterojunction device performance induced by irradiation in amorphous boron carbide films

摘要

Amorphous hydrogenated boron carbide films (a-B_(10)C_(2+x):H_y) on Si p-n heterojunctions were fabricated utilizing plasma enhanced chemical vapor deposition (PECVD). These devices were found to be robust when irradiated with 200 keV He~+ ions. For low doses of irradiation, contrary to most other electrical devices, the electrical performance improved. On the heteroj unctionⅠ(Ⅴ) curve, reverse bias leakage current decreased by 3 orders of magnitude, series resistance across the device decreased by 64%, and saturation current due to generation of electron-hole pairs in the depletion region also decreased by an order of magnitude. It is believed that the improvements in the electrical properties of the devices are due to an initial passivation of defects in the a-B_(10)C_(2+x):H_y film resulting from electronic energy deposition, breaking bonds and allowing them to reform in a lower energy state, or resolving distorted icosahedron anion states.