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Strain hardening behavior of Ni-carbonyl Chemical Vapor Deposited (CVD) material with bimodal grain structures: Ultrafine (UF) grains and large grains with UFano twins

机译:具有双峰晶粒结构的Ni-羰基化学气相沉积(CVD)材料的应变硬化行为:超细(UF)颗粒和UF /纳米双胞胎的大颗粒

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Through Ni-carbonyl CVD process, bulk Ni material (hereafter referred as CVD Ni) with bimodal grain structures, i.e. UF grains and large grains with UFano twins, can be produced. In tensile test, this material demonstrated a very good combination of strength and ductility as well as a special strain hardening behavior. Upon investigating the material's hardening behavior, a critical threshold strain, epsilon(c), of 0.02 was identified for the distinct change in the strain hardening behavior. Prior to this strain level, the strain hardening rate of the CVD Ni was found always higher than that of its counterpart coarse-grained (CG) Ni; but it dropped, after this strain, to the same level as the CG material. Furthermore, through the analysis of results from Tension Unloading Reloading-in-Tension (TURT) tests, this specific strain value was also found to be significant in the change of the hysteresis loop width as well as the back stress strain hardening responsible for the material's Bauschinger behavior. Microstructural evolution examination suggests that most of the twin boundaries (TBs) initially acted as obstacles to dislocation movement providing strong dislocation back stress and hence contributing to the strong hardening behavior. From the strain level of 0.02 and onwards, however, massive detwinning was detected which is responsible for the drop in the hardening rate. Finally, dislocation cell structures, that were typically evolved from entanglements of dislocation inside CG Ni, were also found inside the detwinned large grains of CVD Ni in the high strain regime, which yielded similar strain hardening behavior as in the CG Ni material.
机译:通过Ni-羰基CVD方法,可以生产具有双峰晶粒结构的散装Ni材料(以下称为CVD NI),即UF谷物和具有UF /纳米双胞胎的大颗粒,可以。在拉伸试验中,该材料表明了强度和延展性的良好组合以及特殊的应变硬化行为。在研究材料的硬化行为后,针对应变硬化行为的明显变化鉴定了0.02的临界阈值菌株ε(C)。在该应变水平之前,发现CVD Ni的应变硬化率总是高于其对应于粗粒(CG)Ni的对应物;但是,在这种应变之后掉落到与CG材料相同的水平。此外,通过分析张力卸载重新加载 - 紧张(Turt)测试的结果,还发现该特定的应变值在滞后回路宽度的变化以及负责材料的后应力应变硬化的变化中是显着的Bauschinger行为。微观状进化检查表明,大多数双界(TBS)最初担任脱位运动的障碍,提供强烈的脱位背部应激,因此有助于强化的硬化行为。然而,从0.02和向上的应变水平,检测到巨大的碎屑,其负责硬化速率下降。最后,在高菌株状态下,也发现了通常从CG Ni内脱位内脱位的缠绕的脱位细胞结构,其在高菌株方案中,从CG Ni材料中产生类似的应变硬化行为。

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