机译:等离子体辅助MBE在Si(111)上生长的n型GaN外延层中,施主活化能对载流子浓度的依赖性
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India,Central Research Laboratory, Bharat Electronics, Bangalore 560 013, India;
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India;
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India,Central Research Laboratory, Bharat Electronics, Bangalore 560 013, India;
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India;
Central Research Laboratory, Bharat Electronics, Bangalore 560 013, India;
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India;
A. nitrides; B. epitaxial growth; D. luminescence;
机译:基于拉曼光谱的等离子体辅助分子束外延生长n型GaN纳米线中载流子浓度的测量
机译:(NH_4)_2S_x处理引起的Si掺杂n型GaN中施主活化能和载流子浓度的变化
机译:等离子体辅助MBE在6H-Si(0 0 0 1)轴上直接生长的GaN外延层的结构特性
机译:等离子体辅助MBE在GaN / AlN / Si 111上生长的AlN和AlGaN层的结构表征
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:等离子体辅助MBE在LiGaO2上生长非极性GaN的微观结构
机译:RF等离子体辅助分子束外延在中温GaN缓冲层上生长的高迁移率GaN外延层
机译:化学计量学对等离子体辅助mBE生长在Gaas上立方GaN中缺陷分布的影响