Influence of Al content on the properties of ternary Al2xIn2-2xO3 alloy films prepared on YSZ (111) substrates by MOCVD

摘要

The ternary Al2xIn2-2xO3 films with different Al contents of x [Al/(Al+In) atomic ratio] have been fabricated on the Y-stabilized ZrO2 (111) substrates by metal organic chemical vapor deposition at 700 degrees C. The structural, electrical and optical properties of the films as a result of different Al contents (x=0.1-0.9) were investigated in detail. With the increase of Al content from 10% to 90%, a phase transition from the bixbyite In2O3 structure with a single orientation along (111) to the amorphous structure was observed. The minimum resistivity of 4.7 x 10(-3) Omega cm, a carrier concentration of 1.4 x 10(20) cm(-3) and a Hall mobility of 9.8 cm(2)v(-1) s(-1) were obtained for the sample with x=0.2. The average transmittances for the Al2xIn2-2xO3 films in the visible range were all over 78% and the optical band gap of the films could be tuned from 3.7 to 4.8 eV. (C) 2015 Elsevier Ltd. All rights reserved.