Efficient Si-based light-emitting materials fabricated by Si- and N-coimplanted SiO_2 films

摘要

Experimentla results to fabricate Si-based light-emitting materials by Si and N coimplantation into SiO_2 films are reported. Intense photoluminescence (PL) was observed from the implanted samples with and without annealing. The PL intensity varied with the increased annealing temperature and had a maximum at about 600degC. The X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectra were used to characterised the microstructures. It is suggested that the PL may originate from N-related defects and/or Si-O-based species.