Different luminescent properties of C~＋-implanted SiO_2 films grown by thermal oxidation and PECVD

摘要

Room temperature photoluminescence (PL) from C~＋ -implanted SiO_2 films grown by thermal oxidation and PECVD is reported. There are great differences in the luminescent properties, which are shown by PL spectra, PL excitation (PLE) spectra, and the PL dynamics. The structural analysis of the C~＋ -implanted SiO_2 films are taken by FTIR, Raman, and HRTEM. The differences in light emission are attributed to the structural characteristics of SiO_2 films before and after C ion implantation.