A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

摘要

We report the use of an interrupted growth method in metalorganic chemical vapor deposition (MOCVD) to control the growth of InGaN layers and to grow nanoscale InGaN self-assembled quantum dots (QDs). With a 12-s growth interrupt, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 x 1010 cm~(-2). Strong photoluminescence (PL) emission of InGaN nanostructure was observed at a room temperature with a full-width-half-maximum (FWHM) of about 92 meV. These results suggest that such QDs are potentially useful in nitride-based optoelectronic devices.