Co-doping of sulfur and boron in CVD-diamond

摘要

Diamond films had been grown by microwave plasma-assisted CVD using acetone diluted in hydrogen. Sulfur incorporation in diamond was achieved by co-doping method using dimethyl disulfide and boron dioxide. Structural and compositional characterization of the as-grown films was carried out by scanning electron microscopy (SEM), Raman spectrum, auger electron spectrometer (AES) and particle-induced X-ray emission (PIXE). AES and PIXE analyses confirmed that the sulfur was successfully introduced into diamond films. N-type conduction of the films was confirmed by Seebeck-effect measurements. The donor activity of the sulfur decreased from 0.52 to 0.39 eV with Increasing of S incorporation into diamond. Results indicated that boron facilitated the sulfur into diamond via co-doping method.