C-axis-oriented Bi_(3.25)La_(0.75)Ti_3O_(12) ferroelectric thin film fabricated by chemical solution deposition

摘要

C-axis-oriented Bi_(3.25)La_(0.75)Ti_3O_(12) (BLT) ferroelectric thin films were successfully prepared by chemical solution deposition. According to X-ray diffraction, it is found that the orientation degree increases with the increase of sintering temperature, and at the same time the grain morphology changes from equiaxed to plate-like. Due to the dense morphology and [Bi_2O_2]~(2+) layer of c-preferred orientation of BLT film sintered at 650℃, it exhibits the lowest leakage current density at room temperature. Additionally, a linear relation between V~(0.5) and log(J/T~2) is found, suggesting the behavior of leakage current of BLT films obeys the Schottky emission model. P-E loops show that the c-axis-oriented BLT ferroelectric film exhibits low polarization and small coercive field.