The effect of annealing on the electrical conduction of amorphous Bi-(0.5)Se_(99.4)Zn_(0.1) thin films

M.A. Majeed Khan; Sushil Kumar; M. Husain; M. Zulfequar

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The effect of annealing on the electrical conduction of amorphous Bi-(0.5)Se_(99.4)Zn_(0.1) thin films

机译：退火对非晶Bi-（0.5）Se_（99.4）Zn_（0.1）薄膜导电性的影响

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The electrical conductivity of as-evaporated and thermally annealed films of α-Bi_(0.5)Se_(99.4)Zn_(0.1), grown by vacuum evaporation technique, has been measured in the temperature range of 80-260 K. The experimental data suggest that conduction in the h

机译：在80-260 K的温度范围内测量了通过真空蒸发技术生长的α-Bi_（0.5）Se_（99.4）Zn_（0.1）的蒸发和热退火薄膜的电导率。实验数据表明在h中的传导

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来源
《Materials Letters》 |2008年第11期|p.1572-1574|共3页
作者
M.A. Majeed Khan; Sushil Kumar; M. Husain; M. Zulfequar;
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作者单位

Department of Physics, Jamia Millia Islamia, New Delhi-110025, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
chalcogenide glasses; dc conductivity; activation energy; density of states; hopping parameters;

机译：硫属化物玻璃直流电导率活化能态密度跳跃参数;

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The effect of annealing on the electrical conduction of amorphous Bi-(0.5)Se_(99.4)Zn_(0.1) thin films

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