Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

摘要

GaSb incorporation to InAs/GaAs quantum dots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties, the introduction of an intermediate GaAs layer is considered a good approach. In this work, we study the effect of the introduction of a GaAs intermediate layer between InAs quantum dots and a GaSb capping layer on structural and crystalline quality of these heterostructures. As the thickness of the GaAs intermediate layer increases, a reduction of defect density has been observed as well as changes of quantum dots sizes. This approach suggests a promising method to improve the incorporation of Sb to InAs heterostructures.