Electrical properties of p-type ZnTe thin films by immersion in Cu solution

摘要

ZnTe thin films were deposited on SiO_2 substrate by pulsed-laser deposition (PLD) at room temperature. The ZnTe films were immersed in different concentrations of Cu(NO_3)_2-3H_2O solutions for 1 min, then heated at 200 and 300 ℃, both temperatures for 10 min in a N_2 atmosphere. The X-ray diffraction (XRD) showed the hexagonal and orthorhombic ZnTe phases when the copper-doped films were heated at 200 and 300 ℃ for 10 min respectively. The films immersed in 15 and 60 mg of Cu(NO_3)_2-H_2O solutions had similar values of sheet resistance ～10~4Ω/□, resistivity ～ 10~(-1)Ω cm, specific contact resistance ～10~(-4)Ω cm~2, and hall mobility 5 cm~2/V s. Also, the copper-doped conditions were used to dope the source and drain bias to make a thin-film transistor of ZnTe (TFT) by photolithography.