Influence of Se supply for selenization of Cu(In,Ga)Se_2 precursors deposited by sputtering from a single quaternary target

摘要

Cu(In,Ga)Se_2 (CIGS) precursors were deposited on Mo-coated soda lime glass substrates by a radio frequency magnetron sputtering process from a single target. The selenization of CIGS precursor layer was performed by using a rapid thermal process. Energy dispersive X-ray analysis results show CIGS thin films are in a Cu-poor state. The films selenized with 0 mg and 5 mg are deficient in the Se element. However, films selenized using 20 mg show a slightly rich Se content. The results of X-ray diffraction and Raman spectra analysis indicate that the samples are the chalcopyrite-type structures and in pure phase. Both XRD and Raman scattering results indicate the samples selenized using 5 mg and 10 mg of the Se powder have better crystallinity. Furthermore, the samples selenized using Se powders have better surface morphology. In summary, 10 mg of Se powder for usage is the desired candidate.