Cu(In, Ga)Se_2 Films Deposited by Sputtering with Single Cu(In, Ga)Se_2 and Cu-Ga-In_2Se_3 Targets and a Subsequent Selenization Procedure

摘要

Cu(In, Ga)Se_2 (CIGSe) thin films were prepared by sputtering with single CIGSe or Cu-Ga-In_2Se_3 target and subsequent selenization at 550-700°C. The one- and two-step selenization procedures and the ceramic and cermet targets were used for process comparisons. Microstructure, film growth and film composition were used to evaluate the growth performance. CIGSe films sputtered from the CIGSe target had a low Cu content. CIGSe films prepared with single Cu-Ga-In_2Se_3 target had shown different performance after the one- and two-step selenization procedures. The two-step process did not grow the dense films due to the vaporization of Se-containing species from the incomplete reaction. The high-temperature requirement is the major disadvantage for the post-selenization approach.