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首页> 外文期刊>Materials Letters >Microwave absorption of ε-Fe_2O_3 precipitated from sputter deposited Fe-Si-O amorphous thin film by thermal annealing
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Microwave absorption of ε-Fe_2O_3 precipitated from sputter deposited Fe-Si-O amorphous thin film by thermal annealing

机译:通过热退火从溅射沉积的Fe-Si-O非晶薄膜中析出的ε-Fe_2O_3的微波吸收

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摘要

Granular magnetic thin films were prepared by thermal annealing of rf-sputter-deposited Fe-Si-O amorphous films. The particle size of the precipitated Fe_2O_3 was controlled to obtain a pure e-phase by adjusting the target chemical composition to an atomic ratio SiO_2/Fe_2O_3=2 and annealing for 1 to 3 h at 900 C. For a film annealed for 100 min, an almost symmetrical ferromagnetic resonance signal was observed, with no evidence of residual ferric ions in the amorphous silica matrix.
机译:通过对射频溅射沉积的Fe-Si-O非晶膜进行热退火来制备颗粒磁性薄膜。通过将目标化学组成调整为原子比SiO_2 / Fe_2O_3 = 2并在900°C下退火1至3小时,可以控制沉淀的Fe_2O_3的粒径,以获得纯e相。对于退火100分钟的薄膜,观察到几乎对称的铁磁共振信号,没有证据表明无定形二氧化硅基质中残留铁离子。

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  • 来源
    《Materials Letters》 |2014年第15期|198-200|共3页
  • 作者单位

    Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan;

    Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan;

    Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan;

    National Institute of Advanced Industrial Science and Technology, Hokkaido 2-17-2-1, Tsukisamu-Higashi, Toyohira-ku, Sapporo 062-8517, Japan;

    Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Thin films; Sputtering; Electronic paramagnetic resonance (EPR); Optical properties;

    机译:薄膜;溅射;电子顺磁共振(EPR);光学性质;

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